| 1 |
Single-Crystal Growth and Characterization of β-Ga2O3 (1 0 0) for GaP/Ga2O3 Heterostructures by Hydride Vapor Phase Epitaxy |
Dhandapani Dhanabalan, Raja Sakthivel, Moorthy Babu Sridharan, Balaji Manavaimaran, Axel Strömberg, Lourdudoss Sebastian, and Yan-Ting Sun |
Phys. Status Solidi A |
Wiley |
2025 |
2500234 |
| 2 |
In-situ g-C3N4/NiMn layered double hydroxide nanocomposite for supercapacitor application |
G. Sivasankari, D. Prabha, P. Atheek, P. Puviarasu, V. Velarasan, S. Surya and M. Balaji |
Ionics |
Springer |
2025 |
1-18 |
| 3 |
A highly sensitive and room temperature ethanol gas sensor based on spray deposited Sb doped SnO 2 thin films. , 5(1), pp.293-305. |
Ramanathan, R., Nagarajan, S., Sathiyamoorthy, S., Manavaimaran, B., Barshilia, H.C. and Mallik, R.C. |
Materials Advances |
5 |
2024 |
293-305 |
| 4 |
Phase-matching in terahertz quantum cascade laser sources based on Cherenkov difference-frequency mixing |
Oberhausen, W., Lubianskii, I., Boehm, G., Strömberg, A., Manavaimaran, B., Burghart, D., Sun, Y.T. and Belkin, M.A., |
APL Photonics |
8(9) |
2023 |
091303 |
| 5 |
Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping |
Balaji M., Strömberg, A., Tassev, V. L., Vangala,S. R., Bailly, M., Grisard, A., Gerard, B., Lourdudoss, S., Sun, Y |
Crystals |
13(2) |
2023 |
168 |
| 6 |
Epitaxial Lateral Overgrowth of GaAsP for III-V/Si-Based Photovoltaics |
Strömberg, A., Balaji, M., Srinivasan, L., Lourdudoss, S., Sun, Y |
physica status solidi (a) |
wiley |
2023 |
2200623 |
| 7 |
Semi-insulating InP:Fe growth by hydride vapor phase epitaxy for advanced buried heterostructure quantum cascade lasers |
Strömberg, A., Balaji, M., Pang, X., Schatz, R., Ozolins, O., Lourdudoss, S., Stark, D., Beck, M., Scalari, G., Faist, J., Ryu, J., Mawst, L., Botez, D., Marsland, R., Maisons, G., Carras, M., Sun, Y. |
SPIE Photonics West |
12440 |
2023 |
1244009 |
| 8 |
Heteroepitaxial Growth of GaP Photocathode by Hydride Vapor Phase Epitaxial for Water Splitting and CO2 Reduction |
Strömberg, A., Yuan, Y., Li, F., Balaji, M., Lourdudoss, S., Zhang, P. and Sun, Y. |
Catalysts |
12(11) |
2022 |
1482 |
| 9 |
GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications |
Balaji Manavaimaran and Sivasankaran B. Ravichandran |
Physica Status Solidi B |
259 |
2022 |
2100362 |
| 10 |
Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition |
K. Prabakaran, R. Ramesh, P. Arivazhagan , M. Jayasakthi, S. Sanjay, S. Surender, I. Davis Jacob M. Balaji and K. Baskar |
Materials Science in Semiconductor Processing |
142 |
2022 |
106479 |
| 11 |
Novel gallium oxide/reduced graphene oxide nanocomposite for ammonia gas sensing application |
B.R. Sivasankaran and M. Balaji |
Materials Letters |
288 |
2021 |
129386 |
| 12 |
Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition |
Prabakaran, K., Ramesh, R., Arivazhagan, P., Jayasakthi, M., Sanjay, S., Surender, S., Pradeep, S., Balaji, M. and Baskar, K |
Journal of Alloys and Compounds |
811 |
2020 |
151803 |
| 13 |
Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications |
Prabakaran, K., Jayasakthi, M., Surender, S., Pradeep, S., Sanjay, S., Ramesh, R., Balaji, M., Gautier, N. and Baskar. K |
Applied Surface Science |
476 |
2019 |
993–999 |
| 14 |
Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition |
Prabakaran, K., Jayasakthi, M., Surender, S., Pradeep, S., Sanjay, S., Ramesh, R., Balaji, M. and Baskar, K |
Applied Physics A |
125(3) |
2019 |
206 |
| 15 |
Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures |
Prabakaran, K., Jayasakthi, M., Surender, S., Pradeep, S., Sanjay, S, Ramesh, R, Balaji, M. and Baskar, K |
Optik |
175 |
2018 |
154-162 |
| 16 |
Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD |
Prabakaran, K., Ramesh, R., Jayasakthi, M., Surender, S., Pradeep, S., Balaji, M., Asokan, K. and Baskar. K |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
394 |
2017 |
81-88 |
| 17 |
Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si9+ swift heavy ions |
Arivazhagan, P., Ramesh, R., Balaji, M., Asokan, K. and Baskar, K |
J. Alloys Compd., |
679 |
2016. |
pp. 94–103 |
| 18 |
Silicon Ion Irradiation Effects on AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapour Deposition |
Balaji, M and Baskar, K |
IETE Technical Review |
33 |
2016 |
50-53 |
| 19 |
Room Temperature Operation of a Deep-Etched Buried Heterostructure Photonic Crystal Quantum Cascade Laser |
Peretti, R., Liverini, V., Süess, M.J., Liang, Y., Vigneron, P-B., Wolf, J. M., Bonzon, C., Bismuto, A., Metaferia, W., Balaji, M., Lourdudoss, S., Gini, E., Beck, M. and Faist, J |
Laser & Photonics Reviews |
10(5) |
2016 |
843-848 |
| 20 |
Hydride vapour phase epitaxy-assisted buried heterostructure quantum cascade lasers for sensing applications |
Lourdudoss, S., Metaferia, W., Junesand, C., Balaji, M., Ferré, S., Simozrag, B., Carras, M., Peretti, R., Liverini, V., Beck, M. and Faist, J |
SPIE OPTO International Society for Optics and Photonics |
9370 |
2015 |
93700D |
| 21 |
Influence of initial growth stages on AlN epilayers grown by Metal Organic Chemical Vapour Deposition |
Balaji, M., Ramesh, R., Arivazhagan, Jayasakthi, M., P., Loganathan, R., Prabakaran, K., Suresh, S., Lourdudoss, S. and Baskar, K |
J. Cryst. Growth |
414 |
2015 |
69-75 |
| 22 |
The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD |
Loganathan, R., Balaji, M., Prabakaran, K., Ramesh, R., Jayasakthi, M., Arivazhagan, P., Shubra Singh and Baskar, K |
J Mater Sci: Mater Electron |
26 (7) |
2015 |
pp 5373–5380, |
| 23 |
Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy |
Zheng, Q., Kim, H., Zhang, R., Sardela, M., Zuo, J., Balaji, M., Lourdudoss, S., Sun, Y.T. and Braun, P.V |
Journal of Applied Physics |
118 |
2015 |
224303 (1-8) |
| 24 |
Structural and optical characterization of AlGaN/GaN layers |
Jayasakthi, M., Ramesh, R., Arivazhagan, P., Loganathan, R., Prabakaran, K., Balaji, M. and Baskar, K |
J. Cryst. Growth |
401 |
2014 |
527-531 |
| 25 |
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by High Temperature Hydride Vapor Phase Epitaxy |
Claudel, A., Fellmann, V., Gélard, I., Coudurier, N., Sauvage, D., Balaji, M Blanquet, E., Boichot, R., Beutier, G., Coindeau, S., Pierret, A., Attal-Trétout, B., Luca, S., Crisci, A., Baskar, K. and Pons, M |
Thin Solid Films |
573 |
2014 |
140-147 |
| 26 |
Structural and Carrier Dynamics of GaN and AlGaN-Based Double Heterostructures in the UV Region |
Arivazhagan, P., Ramesh, R., Jayasakthi, M., Loganathan, R., Balaji, M., and Baskar, K. |
Journal of Electronic Materials |
42 (8) |
2013 |
2486–2491 |
| 27 |
Significance of initial stages on the epitaxial growth of AlN using High Temperature Halide Chemical Vapor Deposition |
Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, Coindeau, S., Roussel, H., Pique, D., Baskar, K. and Pons, M |
Phys. Status Solidi C |
9 |
2012 |
511–514 |
| 28 |
Effects of AlN nucleation layers on the growth of AlN ?lms using high temperature hydride vapor phase Epitaxy |
Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, R., Pierret, A., Attal-Trétout, B., Crisci, A., Coindeau, S., Roussel, H., Pique, D., Baskar, K. and Pons, M |
J. Alloys Compd |
526 |
2012 |
103–109 |
| 29 |
Structural characteristics of 70 Mev Si5+ Ion Irradiation Induced Nanoclusters of Gallium Nitride |
Suresh, S., Balaji, M., Ganesh, V., Asokan, K., Kanjilal, D. and Baskar, K |
Int. J. Nanosci |
10 |
2011 |
823-826 |
| 30 |
Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex |
Ganesh, V., Suresh, S., Balaji, M. and Baskar K |
J. Alloys Compd |
498 |
2010 |
52-56 |
| 31 |
Modifications of Defects Concentration Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD |
Suresh, S., Ganesh, V., Prem Kumar, T., Balaji, M.,Ganesan, V. and Baskar, K |
Mater. Res. Soc. |
1195 |
2010 |
B03-05 |
| 32 |
Investigations on the nonidealities in Pd/n-GaN Schottky diodes grown by MOCVD |
Suresh, S., Balaji, M., Ganesh, V. and Baskar, K |
J. Alloys Compd |
506 |
2010 |
615-619 |
| 33 |
Synthesis and Growth of Triaquaglycinesulfatozinc (II), [Zn(SO4) (C2H5NO2) (H2O) 3], a New Semiorganic Nonlinear Optical Crystal |
Sankar, R., Raghavan, C. M., Balaji, M., Kumar, R. M., and Jayavel, R |
ACS- Crystal growth & design |
7(2) |
2007 |
348-353 |