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From the Desk of the Vice Chancellor

Greetings!

As the Vice Chancellor of this premier university, I am extremely pleased to share this space to converse with all of you. The University of Madras is a post- sesquicentennial institution which has forged a glorious path for itself and has been the site for significant scientific discoveries as well as the beacon for national and regional societal transformation. It has successfully managed to hold aloft its tradition even while keeping up with the emerging trends. One reason for this is the way in which the university has kept alive its interactions with all the stakeholders.

The COVID 19 pandemic has introduced a ‘new normal’ and its impact is felt in the workings of the university as well. The students have been attending the lectures online. While online learning has the advantage of being anytime and anywhere, it has taken away the peer group interaction and peer learning which are integral aspects of the university experience. We look forward to welcoming you to the campus very soon. Meanwhile, our faculty and administration will continue to bring the best to the virtual classrooms. As students, you need to view the restrictions posed by the pandemic as a temporary deterrent. Your focus should be to gain the competencies to conduct application oriented research in order to evolve as useful citizens of our society.

Our university boasts of faculty with a high degree of knowledge and commitment to offer the best in teaching and research. Given the context of the pandemic, we need to redefine our teaching-learning processes to offer the best pedagogic experience to our students. Similarly, the post-pandemic era demands that we hone the employment potential and entrepreneurial capacity of our learners. This necessitates that we focus on sponsored research in cutting edge areas.

Our administrative staff have been the backbone of the university. While we move towards a transparent and complete e-governance model, we need more support from you. When the teaching-learning process at our university – from admission to certification -- is moving into the digital era, your skills and competencies need to keep pace.

At our university, we are gearing up for the final round of NAAC re-accreditation. This has offered us an opportunity to assess our Strengths, Weaknesses, Opportunities and Challenges. Further, it has made us more determined to reiterate our quality benchmarks in teaching, research and extension activities. We are aware of this responsibility and fully prepared for it because, our university has always encouraged individual thinking within the established frameworks. This is echoed in the words of Tim Burners Lee, who initiated the World Wide Web: “We are forming cells within a global brain and we are excited that we might start to think collectively. What becomes of us still hangs crucially on how we think individually.” Let us unite to make the educational experience at the University of Madras a synergy of the best minds and best thoughts.

Prof.Dr.S.Gowri

Vice-Chancellor
University of Madras

Dr. M. BalajiM.Sc., M.Phil., Ph.D.,

Assistant Professor (S.G.) & Head in-charge
Department of Materials Science
5

Awards

49

Publications

42

Seminars / Conference

6

Projects

0

Ph.D Awarded

4

Ph.D Present

Publications

Articles (Total Articles: 4)

# Title Author Publisher Volume Year Page(s)
1 Epitaxial lateral overgrowth of GaAsP/Si for tandem solar cell  Strömberg, A., Balaji, M., Srinivasan, L., Lourdudoss, S., and Sun, Y. T. Compound Semiconductor Week (CSW) IEEE 2022 1-2
2 Epitaxial growth of Aluminum Nitride for opto-electronic applications M. Balaji and K. Baskar 3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3) 2017
3 Hydride Vapour Phase Epitaxy Assisted Photonic Device Fabrication S. Lourdudoss, Y-T Sun, W. Metaferia, C. Junesand, H. Kataria, O. Giriprasanth and M. Balaji International Workshop on Advanced Materials and Device Technology 2017
4 Buried Heterostructure Photonic Crystal Quantum Cascade Laser: Towards 2D Large-area Single-mode Operation Liang, Y., Peretti, R., Liverini, V., Süess, M.J., Vigneron, P-B., Wolf, J. M., Bonzon, C., Bismuto, A., Balaji, M., Lourdudoss, S., Metaferia, W., Gini, E., Beck, M. and J. Faist Laser Applications to Chemical, Security and Environmental Analysis 2016

Papers (Total Papers: 9)

# Title Author Publisher Volume Year Page(s)
1 Oxygen ion irradiation on AlGaN/GaN heterostructure grown on silicon substrate by MOCVD Ramesh, R., Arivazhagan, P., Balaji, M., Asokan, K. and Baskar, K AIP 1665 2015 120030
2 Growth of AlN nanostructure on GaN using MOCVD Loganathan, R., Ramesh, R., Jayasakthi, M., Prabakaran, K., Kuppulingam, B., Sankaranarayanan, M., Balaji, M., Arivazhagan, P., Subra Singh and Baskar, K AIP 1665 2015 120005
3 Effect of Al-mole fraction in AlxGa1−xN grown by MOCVD Jayasakthi, M., Ramesh, R., Prabakaran, K., Loganathan, R., Kuppulingam, B., Balaji, M., Arivazhagan, P., Sankaranarayanan, S., Shubra Singh and Baskar, K AIP 1591(1) 2014 1458-1460
4 High Temperature Chemical Vapor Deposition of thick (5 to 20 mm) Aluminum nitride layers E Blanquet, A Claudel, S Lay, R Boichot, N Coudurier, Alexandre Crisci, M Pons, M Balaji and K Baskar International Workshop on crystal growth and characterization of advanced materials and devices. IWCGCAM 2012
5 Photon Decay Time Studies on Al0.45Ga0.55N/Al0.18Ga0.82N/ Al0.45Ga0.55N Double Heterostructures Grown on Sapphire Substrate by MOCVD Arivazhagan, P., Ramesh. R., Jayasakthi, M., Loganathan, R., Balaji, M., and Baskar, K Proc. of SPIE 8549 2011 85492S-1
6 Growth and Characterization of AlxGa1-xN on GaN/Al2O3 Jayasakthi, M., Ramesh, R., Arivazhagan, P., Loganathan, R., Prabakaran, K., Balaji, M. and Baskar, K SPIE 8549 2011 85492R-1
7 Studies on the dislocation densities of Gallium Nitride grown by MOCVD Loganathan, R., Jayasakthi, M., Arivazhagan, P., Ramesh. R., Prabakaran, K., Balaji, M. and Baskar, K SPIE 8549 2011 85492Q-1
8 Epitaxial Growth and optimisation of GaN based device structures by Metal Organic Chemical Vapour Deposition Balaji, M., Suresh, S., Ganesh, V., Prem kumar, T., Kumar, J. and Baskar. K 14th National Seminar on Crystal Growth NSCG 2010
9 Effect of Growth Temperature on Structural, Optical and Electrical Characteristics of n-GaN Grown using MOCVD Balaji, M., Suresh, S., Prem kumar, T., Ganesh, V., Kumar J. and Baskar, K International Workshop on the Physics of Semiconductor Devices IWPSD Proc. 2009 1-4

Books (Total Books: 3)

# Title Author Publisher Volume Year Page(s)
1 The Physics of  Semiconductor Devices : Structural and Optical Characterization of InGaN/GaN Based Quantum Well Structures Grown by MOCVD Prabakaran, K., Surender, S., Pradeep, S., Sanjay, S., Jayasakthi, M., Ramesh, R., Faulques, E., Balaji, M., Singh, S. and Baskar, K Springer Nature Switzerland AG Springer Cham 2019 349
2 Growth and Characterization of AlInGaN/AlN/GaN Grown by MOCVD Loganathan, R., Jayasakthi, M., Prabakaran, K., Ramesh, R., Arivazhagan, P., Kuppulingam, B., Sankaranarayanan, S., Balaji, M., Shubra, S. and Baskar, K Physics of Semiconductor Devices - ENVENG book series Springer International : ISBN: 978-3-319-03002-9 2014 117
3 Structural optical and electrical studies of AlGaN/GaN hetrostructures with AlN Interlayer grown on sapphire substrate by MOCVD Ramesh, R., Arivazhagan, P., Jayasakthi, M., Loganthan, R., Prabakaran, K., Kuppuligam, B., Balaji, M. and Baskar, K Physics of Semiconductor Devices - ENVENG book series Springer International: ISBN: 978-3-319-03002-9 2014 119

Journals (Total Journals: 33)

# Title Author Publisher Volume Year Page(s)
1 Single-Crystal Growth and Characterization of β-Ga2O3 (1 0 0) for GaP/Ga2O3 Heterostructures by Hydride Vapor Phase Epitaxy Dhandapani Dhanabalan, Raja Sakthivel, Moorthy Babu Sridharan, Balaji Manavaimaran, Axel Strömberg, Lourdudoss Sebastian, and Yan-Ting Sun Phys. Status Solidi A Wiley 2025 2500234
2 In-situ g-C3N4/NiMn layered double hydroxide nanocomposite for supercapacitor application G. Sivasankari, D. Prabha, P. Atheek, P. Puviarasu, V. Velarasan, S. Surya and M. Balaji Ionics Springer 2025 1-18
3  A highly sensitive and room temperature ethanol gas sensor based on spray deposited Sb doped SnO 2 thin films. , 5(1), pp.293-305. Ramanathan, R., Nagarajan, S., Sathiyamoorthy, S., Manavaimaran, B., Barshilia, H.C. and Mallik, R.C. Materials Advances 5 2024 293-305
4 Phase-matching in terahertz quantum cascade laser sources based on Cherenkov difference-frequency mixing Oberhausen, W., Lubianskii, I., Boehm, G., Strömberg, A., Manavaimaran, B., Burghart, D., Sun, Y.T. and Belkin, M.A., APL Photonics 8(9) 2023 091303
5 Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping Balaji M., Strömberg, A., Tassev, V. L., Vangala,S. R., Bailly, M., Grisard, A., Gerard, B., Lourdudoss, S., Sun, Y Crystals 13(2) 2023 168
6 Epitaxial Lateral Overgrowth of GaAsP for III-V/Si-Based Photovoltaics Strömberg, A., Balaji, M., Srinivasan, L., Lourdudoss, S., Sun, Y physica status solidi (a) wiley 2023 2200623
7 Semi-insulating InP:Fe growth by hydride vapor phase epitaxy for advanced buried heterostructure quantum cascade lasers  Strömberg, A., Balaji, M., Pang, X., Schatz, R., Ozolins, O., Lourdudoss, S., Stark, D., Beck, M., Scalari, G., Faist, J., Ryu, J., Mawst, L., Botez, D., Marsland, R., Maisons, G., Carras, M., Sun, Y. SPIE Photonics West 12440 2023 1244009
8 Heteroepitaxial Growth of GaP Photocathode by Hydride Vapor Phase Epitaxial for Water Splitting and CO2 Reduction  Strömberg, A., Yuan, Y., Li, F., Balaji, M., Lourdudoss, S., Zhang, P. and Sun, Y. Catalysts 12(11) 2022 1482
9 GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications Balaji Manavaimaran and Sivasankaran B. Ravichandran Physica Status Solidi B 259 2022 2100362
10 Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition K. Prabakaran, R. Ramesh, P. Arivazhagan , M. Jayasakthi, S. Sanjay, S. Surender, I. Davis Jacob M. Balaji and K. Baskar Materials Science in Semiconductor Processing 142 2022 106479
11 Novel gallium oxide/reduced graphene oxide nanocomposite for ammonia gas sensing application B.R. Sivasankaran and M. Balaji Materials Letters 288 2021 129386
12 Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition Prabakaran, K., Ramesh, R., Arivazhagan, P., Jayasakthi, M., Sanjay, S., Surender, S., Pradeep, S., Balaji, M. and Baskar, K Journal of Alloys and Compounds 811 2020 151803
13 Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications Prabakaran, K., Jayasakthi, M., Surender, S., Pradeep, S., Sanjay, S., Ramesh, R., Balaji, M., Gautier, N. and Baskar. K Applied Surface Science 476 2019 993–999
14 Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition  Prabakaran, K., Jayasakthi, M., Surender, S., Pradeep, S., Sanjay, S., Ramesh, R., Balaji, M. and Baskar, K Applied Physics A 125(3) 2019 206
15 Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures Prabakaran, K., Jayasakthi, M., Surender, S., Pradeep, S., Sanjay, S, Ramesh, R, Balaji, M. and Baskar, K Optik 175 2018 154-162
16 Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD Prabakaran, K., Ramesh, R., Jayasakthi, M., Surender, S., Pradeep, S., Balaji, M., Asokan, K. and Baskar. K Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 394 2017 81-88
17 Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si9+ swift heavy ions Arivazhagan, P., Ramesh, R., Balaji, M., Asokan, K. and Baskar, K J. Alloys Compd., 679 2016. pp. 94–103
18 Silicon Ion Irradiation Effects on AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapour Deposition Balaji, M and Baskar, K IETE Technical Review 33 2016 50-53
19 Room Temperature Operation of a Deep-Etched Buried Heterostructure Photonic Crystal Quantum Cascade Laser Peretti, R., Liverini, V., Süess, M.J., Liang, Y., Vigneron, P-B., Wolf, J. M., Bonzon, C., Bismuto, A., Metaferia, W., Balaji, M., Lourdudoss, S., Gini, E., Beck, M. and Faist, J Laser & Photonics Reviews 10(5) 2016 843-848
20 Hydride vapour phase epitaxy-assisted buried heterostructure quantum cascade lasers for sensing applications Lourdudoss, S., Metaferia, W., Junesand, C., Balaji, M., Ferré, S., Simozrag, B., Carras, M., Peretti, R., Liverini, V., Beck, M. and Faist, J SPIE OPTO International Society for Optics and Photonics 9370 2015 93700D
21 Influence of initial growth stages on AlN epilayers grown by Metal Organic Chemical Vapour Deposition Balaji, M., Ramesh, R., Arivazhagan, Jayasakthi, M., P., Loganathan, R., Prabakaran, K., Suresh, S., Lourdudoss, S. and Baskar, K J. Cryst. Growth 414 2015 69-75
22 The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD Loganathan, R., Balaji, M., Prabakaran, K., Ramesh, R., Jayasakthi, M., Arivazhagan, P., Shubra Singh and Baskar, K J Mater Sci: Mater Electron 26 (7) 2015 pp 5373–5380,
23 Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy Zheng, Q., Kim, H., Zhang, R., Sardela, M., Zuo, J., Balaji, M., Lourdudoss, S., Sun, Y.T. and Braun, P.V Journal of Applied Physics 118 2015 224303 (1-8)
24 Structural and optical characterization of AlGaN/GaN layers Jayasakthi, M., Ramesh, R., Arivazhagan, P., Loganathan, R., Prabakaran, K., Balaji, M. and Baskar, K J. Cryst. Growth 401 2014 527-531
25 Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by High Temperature Hydride Vapor Phase Epitaxy Claudel, A., Fellmann, V., Gélard, I., Coudurier, N., Sauvage, D., Balaji, M Blanquet, E., Boichot, R., Beutier, G., Coindeau, S., Pierret, A., Attal-Trétout, B., Luca, S., Crisci, A., Baskar, K. and Pons, M Thin Solid Films 573 2014 140-147
26 Structural and Carrier Dynamics of GaN and AlGaN-Based Double Heterostructures in the UV Region  Arivazhagan, P., Ramesh, R., Jayasakthi, M., Loganathan, R., Balaji, M., and Baskar, K. Journal of Electronic Materials 42 (8) 2013 2486–2491
27 Significance of initial stages on the epitaxial growth of AlN using High Temperature Halide Chemical Vapor Deposition Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, Coindeau, S., Roussel, H., Pique, D., Baskar, K. and Pons, M Phys. Status Solidi C 9 2012 511–514
28 Effects of AlN nucleation layers on the growth of AlN ?lms using high temperature hydride vapor phase Epitaxy Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, R., Pierret, A., Attal-Trétout, B., Crisci, A., Coindeau, S., Roussel, H., Pique, D., Baskar, K. and Pons, M J. Alloys Compd 526 2012 103–109
29 Structural characteristics of 70 Mev Si5+ Ion Irradiation Induced Nanoclusters of Gallium Nitride Suresh, S., Balaji, M., Ganesh, V., Asokan, K., Kanjilal, D. and Baskar, K Int. J. Nanosci 10 2011 823-826
30 Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex Ganesh, V., Suresh, S., Balaji, M. and Baskar K J. Alloys Compd 498 2010 52-56
31 Modifications of Defects Concentration Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD Suresh, S., Ganesh, V., Prem Kumar, T., Balaji, M.,Ganesan, V. and Baskar, K Mater. Res. Soc. 1195 2010 B03-05
32 Investigations on the nonidealities in Pd/n-GaN Schottky diodes grown by MOCVD Suresh, S., Balaji, M., Ganesh, V. and Baskar, K J. Alloys Compd 506 2010 615-619
33 Synthesis and Growth of Triaquaglycinesulfatozinc (II), [Zn(SO4) (C2H5NO2) (H2O) 3], a New Semiorganic Nonlinear Optical Crystal Sankar, R., Raghavan, C. M., Balaji, M., Kumar, R. M., and Jayavel, R ACS- Crystal growth & design 7(2) 2007 348-353
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