| 1 |
CMP uniformity |
A new apparatus is provided that allows for uniform polishing of semiconductor surfaces. The single polishing pad of conventional CMP methods is divided into a split pad, the split pad allows for separate adjustments of CMP control parameters across the surface of the wafer. These adjustments can extend from the center of the wafer to its perimeter (along the radius of the wafer) thereby allowing for the elimination of conventional problems of non-uniformity of polishing between the center of the surface that is polished and the perimeter of the surface that is polished. |
2001 |
U. S.Patent |
| 2 |
Method to form shallow trench isolations |
A new method of fabricating shallow trench isolations has been achieved. A pad oxide layer is formed overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the pad oxide layer. A protective layer is deposited overlying the silicon nitride layer. The protective layer, the silicon nitride layer, and the pad oxide layer are patterned to expose the semiconductor substrate where shallow trench isolations are planned. The semiconductor substrate is etched to form trenches for the planned shallow trench isolations. A large trench etching angle is used. The presence of the protective layer prevents loss of the silicon nitride layer during the etching. A trench filling layer is deposited overlying the protective layer and filling the trenches. The trench filling layer and the protective layer are polished down to complete the shallow trench isolations in the manufacture of the integrated circuit device. |
2003 |
U. S.Patent |
| 3 |
Multiple steps CMP polishing |
An improved chemical mechanical polishing apparatus for planarizing semiconductor surface materials. The single rotating polishing platen with an attached pad of conventional CMP processes is replaced with two controlled independently driven, concentric and coplanar, polishing platens. The two co-planar polishing platens allows for separate adjustable options to the CMP polishing process. The options are provided by having pads of different material compositions and hardness. Moreover, an annular space is provided between the platens to introduce the usage of two slurry formulations, one to each pad, on the same CMP tool. The annular space between platens forming a drain path for catching and containing slurry waste. |
2003 |
U. S.Patent |
| 4 |
Linear polishing for improving substrate uniformity |
A linear polishing apparatus for polishing a semiconductor substrate including a novel polishing belt arrangement with at least two polishing belts forming a continuous loop. Each belt having an outside polishing surface and an inside smooth surface. The belts are spaced alongside each other sharing a common axis at each end. The belts are looped around a pair of rollers making up a driver roller at one end and a driven roller at the other end. A platen member interposes each belt and is placed between the pairs of rollers. The platen provides a polishing plane and supporting surface for the polishing belts. The polishing plane includes a plurality of holes communicating with an elongated plenum chamber underlying the plane. The chamber supplies a compressed gas to impart an upward pressure against the polishing belts. The driver rollers are coupled to separate motors to independently drive and control at least said two of the polishing belts. |
2004 |
U. S.Patent |
| 5 |
High K artificial lattices for capacitor applications to use in CU or AL BEOL |
An improved and new process of fabricating high dielectric constant MIM capacitors. These high dielectric constant MIM capacitor met all of the stringent requirements needed for both for both RF and analog circuit applications. For the high dielectric constant MIM capacitor, the metal is com prised of copper electrodes in a dual damascene process. The dielectric constant versus the total thickness of Super lattices is controlled by the number of layers either 4/4, 2/2, and 1/1 artificial layers. Hence thickness of the film can be easily controlled. Enhancement of dielectric constant is because of interface. Dielectric constants near 900 can be easily achieved for 250 Angstrom thick super lattices. MBE, molecular beam epitaxy or ALCVD. atomic layer CVD techniques is used for this type layer growth process. |
2006 |
U. S.Patent |
| 6 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device. |
A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation structures as well as application of high temperature oxidation and activation procedures, the fabrication sequences used to obtain the strained silicon lay ers is initiated. A semiconductor alloy layer is deposited fol lowed by an oxidation procedure used to segregate a germa nium component from the overlying semiconductor alloy layer into an underlying single crystalline silicon body. The level of germanium segregated into the underlying single crystalline silicon body determines the level of strain, which is in tensile state of a subsequently selectively grown silicon layer. A second embodiment of this invention features the thinning of a portion of the semiconductor alloy layer prior to the oxidation procedure allowing a lower level of germanium to be segregated into a first underlying portion of the under lying single crystalline silicon body, while during the same oxidation procedure a second portion of the underlying single crystalline silicon body receives a higher level of germanium segregation. So the Subsequently deposited silicon-germa nium layer, although the same process and thickness, can be strained in different states (tensile or compressive) and levels, depending different underlying portions’ germanium concen tration. |
2008 |
U. S.Patent |
| 7 |
An Oximeter device for detecting the arterial blood gas in the transmucosal region of the oral cavity |
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2020 |
Indian Filed |
| 8 |
A device for continuous monitoring of oxygen saturatiin level and pulse rate and the method involved thereof |
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2020 |
Indian Filed |
| 9 |
An Oximeter device for detecting arterial blood gas in the Transmucosal Region of the oral cavity |
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2020421037063 - Filed on 11/09/2020.
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2020 |
Indian filed |
| 10 |
A Nanostructured crystalline hydroxyapatite powder from natural bio-waste and method for preparation thereof |
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Application Number: 202341090108, Filed on 30/12/2023.
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2023 |
Indian filed |
| 11 |
Bioresorbable haemostatic sponge material for rapid blood clot application |
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Application Number: 202441010702, Filed on 15/02/2024.
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2024 |
Indian filed |
| 12 |
A Nanostructured biomedical device for chronic wound healing |
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2024 |
Indian filed |
